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Saturday, August 1, 2020 | History

2 edition of High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications found in the catalog.

High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications

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Published by National Aeronautics and Space Administration, Scientific and Technical Information Division, For sale by the National Technical Information Service] in [Washington, DC], [Springfield, Va .
Written in English

    Subjects:
  • Lasers in astronautics.

  • Edition Notes

    Other titlesHigh power AlGaAs channeled substrate planar diode lasers for spaceborne communications.
    StatementJ.C. Connolly ... [et al].
    SeriesNASA contractor report -- 4189., NASA contractor report -- NASA CR-4189.
    ContributionsConnolly, J. C., United States. National Aeronautics and Space Administration. Scientific and Technical Information Division.
    The Physical Object
    FormatMicroform
    Pagination1 v.
    ID Numbers
    Open LibraryOL18033942M

      The first reports [1–4] of working semiconductor laser diodes in the fall of by the research groups at General Electric in Schenectady, IBM TJ Watson Center, General Electric in Syracuse, and MIT Lincoln Laboratory presaged the incredible digital information revolution of the last two story of how the first diode laser came to be is recounted in many journal articles. A laser diode, (LD), injection laser diode (ILD), or diode laser is a semiconductor device similar to a light-emitting diode in which a diode pumped directly with electrical current can create lasing conditions at the diode's junction.: 3 Laser diodes can directly convert electrical energy into light. Driven by voltage, the doped p-n-transition allows for recombination of an electron with a hole.

    Edison, NJ Ma - OSI Laser Diode, Inc (LDI) an OSI Systems Company, announces the innovative TCW TriBiner fiber-coupled lasers, the TCW RGBMR The new triple wavelength device is a red, green, and blue (RGB) laser diode module that has been specifically designed to meet strict efficiency footprint requirements of the visible laser display market. high-power lasers. The localization of the defects inside the resonator by micro-photoluminescence mapping and focused ion beam microscopy analysis is demon-strated. Results from different high-power laser designs, including, broad-area lasers, laser bars, and tapered lasers are compared. In chapter 5, the COD temperature dynamics are analyzed.

      diode commense lasing (functioning). As mentioned previously, LEDs and laser diodes are temperature sensitive when considering overall lifetime, for example, operating a laser diode at 10 °C higher than rated will half the life of the diode. Also a laser usually will stop functioning at °C. Evans, J. K. Butler and B. Goldstein, "Observations and Consequences of Nonuniform Aluminum Concentrations in the Channel Regions of AlGaAs Channeled-Substrate-Planar Lasers," IEEE Journal of Quantum Electronics, Vol. QE, No. 11, pp. , November,


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High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications Download PDF EPUB FB2

Index-guided channeled-substrate-planar (CSP) AlGaAs diode lasers are being developed for reliable, high-power operation for use as sources in spaceborne optical communications sytems.

Although most work on this AlGaAs structure has been aimed at optimizing preformance at output wavelengths less than Å, emission in the Å regime is also of : D.

Carlin, G. Pultz, B. Goldstein. High-power single mode channeled-substrate-planar AlGaAs diode lasers are being developed for reliable, high-power operation for use as sources in spaceborne optical communications systems.

Most work on AlGaAs semiconductor lasers has been focused on devices with an emission wavelengths less than A where both high power and reliable Cited by: 4. High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed.

The emission wavelength was optimized at to nm. A high power channeled substrate planar AlGaAs diode laser with an emission wavelength of to A was developed. The optoelectronic behavior (power current, single spatial and spectral behavior, far field characteristics, modulation, and astigmatism properties) and results of computer modeling studies on the performance of the laser are : J.

Connolly, B. Goldstein, G. Pultz, S. Slavin, D. Carlin, M. Ettenberg. High-power single-mode channeled-substrate planar AlGaAs diode lasers are being developed for reliable high-power operation for use as sources in spaceborne optical communication systems.

The CSP laser structure has been optimized for operation at an emission wavelength of nm. A high power single spatial mode channeled substrate planar AlGaAs semiconductor diode laser was developed.

The emission wavelength was optimized at to nm. The operating characteristics (power current, single spatial mode behavior, far field radiation patterns, and spectral behavior) and results of computer modeling studies on the.

High-Power AIGaAs Channeled Substrate Planar Diode Lasers for Spaceborne Communications J. Connolly, B. Goldstein, G. Pultz, S. Slavin, D. Carlin, and M. Ettenberg David Sarnoff Research Center Princeton, New Jersey Prepared for Langley Research Center under Contract NAS National Aeronautics and Space Administration.

High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications. Final report, 16 July October Article. Reference: High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications.

Final report, 16 July October Final report, G.A. Evans, B. Goldstein, and J.K. Butler (), Observations and con-sequences of non-uniform aluminum concentrations in the channel regions of AlGaAs channeled-substrate-planar lasers, IEEE J.

Quantum Electronics, QE, 11, – Get this from a library. High-power AlGaAs channeled substrate planar diode lasers for spaceborne communications. [J C Connolly; United States. National Aeronautics and Space Administration.

Scientific and Technical Information Division.;]. Get this from a library. High-power single spatial mode AlGaAs channeled-substrate-planar semiconductor diode lasers for spaceborne communications.

[J C Connolly; Donald B Carlin; Michael Ettenberg; United States. National Aeronautics and Space Administration. Scientific and Technical Information Division.]. A channeled‐substrate‐planar AlGaAs laser has been operated to mW cw, and mW cw in single fundamental spatial mode. A single fundamental spectral mode is observed up to about 70 mW.

Beyond 70 mW there are minor increases in spectral sideband power and the far‐field pattern broadened asymmetrically with increased drive. Both these effects are attributed to spatial ‘‘hole. The semiconductor laser we will model is an AlGaAs Channeled Substrate Planar (CSP) laser with the device characteristics listed in table (Liu, Kikuchi and Ohtsubo []).

The Langevin noise terms are neglected in the simulations in order to see the pure dynamics of the chaotic behavior. 88 Channeled-substrate planar structure (AlGa)As injection lasers K.

Aiki, M. Nakamura, T. Kuroda, J. Umeda (Applied Physics Letters ) 91 Transverse-mode control in an injection laser by a strip- loaded waveguide H.

Kawaguchi, T. Kawakami (IEEE Journal of Quantum Electronics ). High Power Laser Diode Arrays. high power laser diode. Semiconductor laser structures described so far have been developed for low power applications, such as providing a source in em–wave communication system.

Their limitation in the output power mainly arises form the leakage current, which increases with an increase in the applied. A wavelength‐locked, AlGaAs channeled‐substrate‐planar distributed feedback laser has been made that operates to 40 mW pulsed.

The Bragg grating is situated at the shoulders of the layers of AlGaAs and GaAs. Overall power efficiencies of 15% have been measured at 40 mW of output power. Efficient, reliable, robust – our high-power diode lasers impress with their excellent quality and long service life.

The entire process and technology chain in diode lasers Jenoptik develops and produces high-power diode lasers – ranging from semiconductor material, Mounted Diode Lasers and laser stacks to fiber-coupled diode laser modules.

High-Power Diode Lasers For Space Communications: A Review D. Botez Proc. SPIEFree-Space Laser Communication Technologies, pg (2 May ); doi: / The Laser Diode Mount is designed to provide simple air-cooling for high-power laser diodes.

Figure 15 shows an example of an experimental laboratory setup that can be used to perform full characterization of high-power laser diodes accurately and rapidly. Abstract. This review presents the basic ideas and some examples of the chip technology of high-power diode lasers (λ = nm − nm) in connection with the achievements of mounted single-stripe emitters in recent years.Our line of high power laser diodes is the most complete in the industry.

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